Magnetoresistive random access memory (MRAM) is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of eSRAM and the non–volatility of Flash onto a single chip. MRAM uses magnetic moments, rather than an electric charge, to determine the on–off state of the memory bit cell. It allows a single memory solution to replace multiple memory options within one chip—helping to enable faster, more cost–effective solutions for next-generation memory–intensive products.More on: http://www.futuristics.eu/news/archives/category/all-posts/nanotech/
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